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    Silicon Power debuts new DDR3 modules

    Posted on Sunday, July 05 2009 @ 01:55:21 CEST by Thomas De Maesschalck


    Silicon Power has released new dual-channel DDR3-1333 and DDR3-1066 memory kits:
    Silicon Power’s DDR3-1333 /1066 memory modules are in compliance with JEDEC DDR3 standards. Using the new Fly-by circuit design for efficient communications between DRAM modules and the controller; its On-DIE Termination (ODT) technology dramatically reduces unwanted reflection signals and maximizes speed. Silicon Power insists on using original memory modules and FBGA packaging for better heat dissipation and accurate data transfer. Tested 100% proof for dual channel operation, Silicon Power’s dual channel DDR3 memory pack is stable, durable and highly compatible.

    Silicon Power’s DDR3-1333/1066 dual channel memory pack is available in 4GB (2GB x 2) and 2GB (1GB x 2) variants for users to choose from. It is in compliance with RoHS standards, comes with a complete after-sales service and lifetime warranty.

    Product features
    New generation memory module, effectively reduces power consumption by 20% ~ 30%
    Original 128Mx8 FBGA modules for better heat dissipation
    Uses Fly-by circuitry design for efficient communications between DRAM modules and the controller
    On-DIE Termination (ODT) technology dramatically reduces unwanted reflection signals and maximizes speed
    Uses original memory modules, FBGA packaging and ruggedly tested under dual channel operation
    Stable, durable and highly compatible

    Product specifications
    Memory type: DDR3 Memory
    Memory pin: 240Pin Long-DIMM
    Operating frequency: DDR3-1333MHz / DDR3-1066MHz
    Mode of operation: Unbuffered Non-ECC Memory
    Capacity: 4GB(2GB*2) / 2GB(1GB*2)
    Module: 128Mx8 (bit) (single module)
    Operating voltage: 1.5 V
    Cas latency:9 (1333MHz) / 7 (1066MHz)
    Warranty: Lifetime



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