Posted on Tuesday, July 28 2015 @ 14:30 CEST by Thomas De Maesschalck
SK Hynix announces it will start production of 3D NAND flash memory in Q3 2015, making it the fourth memory maker to make 3D NAND after Samsung, Toshiba and Micron. SK Hynix will offer a 36-layer 128Gb NAND MLC chip and promises to deliver a 48-layer TLC version later this year.
The part will be a 36-layer 128Gbit NAND multilayer-cell (MLC) device. In addition the company said it would complete the design of a 48-layer triple-layer cell (TLC) in 2015 to be able to meet demand from the solid-state drive market in 2016. SK Hynix had announced a 24-layer NAND device as a prototype.
The announcement was made as part of SK Hynix's reporting on its financial results for the second quarter of 2015. The company made a net income of 1.1 trillion won on revenue of 4.6 trillion won which was year-on-year by 18 percent.
Source: EE Times
