Posted on Saturday, October 21 2006 @ 3:08 CEST by Thomas De Maesschalck
Samsung announced it has created the first 50nm DDR2 memory chips, which will increase production efficiency from the 60nm level by 55%
The new 1Gbit DRAM incorporates advanced technologies such as three-dimensional (3D) transistor design and multi-layered dielectric technology, which greatly enhance performance and data storage capabilities, according to Samsung.
"With the 50nm DRAM development, we're continuing our technology leadership, paving the way for our customers to reap not only greater cost efficiencies but also to make superior products," said Nam Yong Cho, executive vice president of memory sales and marketing at Samsung's Semiconductor Business.
More details at
DigiTimes.
