Intel and Micron to build new wafer NAND fab in Singapore

Posted on Tuesday, November 07 2006 @ 8:12 CET by Thomas De Maesschalck
Intel and Micron announced to built their fourth wafer fab for the production of NAND flash memory in Singapore:
Since the formation of the Intel-Micron joint venture IM Flash Technologies LLC in January 2006, the companies have brought online a 300-mm NAND fabrication facility in Manassas, Virginia, and a Lehi, Utah, 300-mm wafer fab is on track to be in production early in 2007. The venture also currently produces NAND through existing capacity at Micron's Boise, Idaho, fabrication facilities.

Intel and Micron said Monday (Nov. 6) that they intend to form a joint venture in Singapore to build and manage a NAND flash wafer fab that will come online in the second half of 2008. The fab would initially use a 50-nm process technology on 300-mm wafers. The Singapore JV's facility is expected to break ground in the first half of 2007.
More details at EE Times.

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