The newly-validated DDR3 products are 1Gb DDR3 SDRAM component manufactured on 80nm process technology, 1GB 2GB DDR3 Unbuffered-DIMMs. These devices have operating speeds of 800MHz and 1066MHz and a 1.5V power supply. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for 800MHz, and 7-7-7 for 1066MHz, to suit the needs of a wide range of PCs, workstations and other applications.Research firm iSuppli expects DDR3 will account for 25% of the DRAM market by the end of next year and that it will dominate the market by 2010.
In addition to its high speed characteristics, DDR3 features reduced current consumption of almost 25%, compared to the present generation DDR2. Hynix’s “three-dimensional transistor” architecture also minimizes current leakage to further reduce overall current consumption and ensure data integrity.
Hynix DDR3 validated by Intel
Posted on Wednesday, May 02 2007 @ 00:42 CEST by Thomas De Maesschalck