Hynix announced its DDR3 memory chips have been validated by Intel:
The newly-validated DDR3 products are 1Gb DDR3 SDRAM component manufactured on 80nm process technology, 1GB 2GB DDR3 Unbuffered-DIMMs. These devices have operating speeds of 800MHz and 1066MHz and a 1.5V power supply. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for 800MHz, and 7-7-7 for 1066MHz, to suit the needs of a wide range of PCs, workstations and other applications.
In addition to its high speed characteristics, DDR3 features reduced current consumption of almost 25%, compared to the present generation DDR2. Hynix’s “three-dimensional transistor” architecture also minimizes current leakage to further reduce overall current consumption and ensure data integrity.
Research firm iSuppli expects DDR3 will account for 25% of the DRAM market by the end of next year and that it will dominate the market by 2010.