The memory comes with a promise of a power consumption reduction of 40% compared to current commercial DDR2 modules, due to DDR3's 90 nm fabrication technology, allowing for lower operating currents and voltages (1.5 V, compared to DDR2's 1.8 V or DDR's 2.5 V). "Dual-gate" transistors will be used to reduce leakage of current.
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