Memory maker Hynix announced it has created the industry's first 66nm mobile DRAM with a capacity of 1Gb.
The chip uses very little power and has a max throughput of up to 1.6GB/s:
This mobile DRAM operates at a maximum clock speed of 200MHz, resulting in a throughput of up to 1.6GB of data per second with a 32-bit I/O, detailed Hynix. As this device consumes very little power, the extended battery life makes it suitable for a wide range of portable electronics devices, Hynix highlighted.
This 1Gb mobile DRAM is classified in Hynix's 'one-chip solutions' family of products, which combine SDRAM/DDR DRAM interfaces in x16/x32 single-chip configurations. This design allows Hynix the flexibility of offering wire bonded options to meet the specific needs of its customers, the company said.