The 0.13-micron embedded flash process employs the same split-gate flash cell as the previous generation, enabling easy migration, TSMC said. It is fully compatible with TSMC's logic baseline of 0.13-micron general-purpose process (G) and low power process (LP), which helps customers get the best out of their investment in libraries and silicon intellectual property (IP), the company highlighted.
Sam Chen, director of memory platform marketing at TSMC, indicated that the process' low power transistor makes it ideal for ZigBee/Wibree devices, wireless headsets, hearing aids, smart cards and other applications requiring ultra-low power consumption ranging from 1.2V to 1.5V.
TSMC starts making 130nm embedded flash
Posted on Saturday, Aug 25 2007 @ 22:21 CEST by Thomas De Maesschalck