Samsung debuts first 60nm 2Gb DDR2 chips

Posted on Friday, Sep 14 2007 @ 08:26 CEST by Thomas De Maesschalck
Samsung today announced it has created the first 60nm 2Gb DDR2 memory chips.
Applying the ultra finer 60-nanometer processing technology, the new chip will be massively produced from later this year, the South Korean chipmaker said Wednesday.

In comparison with the previous 80-nanometer 2-gigabit DDR2, the advanced 60 nano-scale with a transmitting speed of 800 megabits per second has enhanced DRAM performance by up to 20 percent and increased production efficiency by 40 percent, Samsung added.

``The move itself has a rather greater meaning as Samsung Electronics made a room to gear up the move towards higher densities in high-end chip segments,'' said a company official.

He added the new device provides storage capacity twice as much as in existing system memory solutions, accelerating efforts by chipmakers to memory capacity.

``We expect the new chip to contribute to stabilizing the prices of DRAM chips,'' said another Samsung official.

With the introduction of the 2-gigabit DDR2, Samsung completes its DDR2 product lineup for production at the 60-nano scale from 512-megabit to 2-gigabit. Its 1-gigabit and 512-megabit chips are already being produced with 60-nano technology.
Source: Korea Times


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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.



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