Samsung makes breaktrough in 0.10 micron DRAM process

Posted on Monday, April 12 2004 @ 19:58 CEST by Thomas De Maesschalck

Samsung has recently improved the yield rates for its 0.10micron DRAM process after resolving some problems with alumina-aluminium oxide (Al₂O₃)

Thanks to this breaktrough yield rates have improved to about 80% for this process according to sources.

The company’s DRAM allocation to Taiwan, as a result, could increase by one million 256Mbit equivalent units this month, said an IC distributor source in Taiwan. As reported on February 10, Samsung’s DRAM production based on an unidentified process was affected by a shift from oxide-nitride-oxide (ONO) dielectric to Al₂O₃. A source recently suggested that the problem occurred on the company’s 0.10-micron process.

Source: DigiTimes

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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