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Samsung makes breaktrough in 0.10 micron DRAM process

Posted on Monday, April 12 2004 @ 19:58:06 CEST by

Samsung has recently improved the yield rates for its 0.10micron DRAM process after resolving some problems with alumina-aluminium oxide (Al2O3)

Thanks to this breaktrough yield rates have improved to about 80% for this process according to sources.
The company’s DRAM allocation to Taiwan, as a result, could increase by one million 256Mbit equivalent units this month, said an IC distributor source in Taiwan. As reported on February 10, Samsung’s DRAM production based on an unidentified process was affected by a shift from oxide-nitride-oxide (ONO) dielectric to Al2O3. A source recently suggested that the problem occurred on the company’s 0.10-micron process.
Source: DigiTimes



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