Super Talent DDR3-1800 4GB memory kit launched

Posted on Wednesday, April 23 2008 @ 13:55 CEST by Thomas De Maesschalck
Super Talent has released a new DDR3-1800 4GB memory kit in their Project X series. The kit runs at 1800MHz with 8-8-8-24 timings and a voltage of 1.9V.
Super Talent’s Project X memory is widely regarded as the world’s most advanced DDR3. “This represents another major first-to-market milestone for Super Talent”, commented Super Talent Marketing Director, Joe James. “While competitors are only able to produce 4GB kits up to DDR3-1600, we’ve engineered a kit that performs at elevated clock speeds while still supporting aggressive latencies.”

This Project X kit is built with the fastest available, hand selected Micron DRAM chips, and is stress tested as a matched pair on a dual channel Asus® Striker II Extreme motherboard.

Project X memory is developed in Super Talent’s Silicon Valley Engineering Labs to deliver the highest attainable DDR3 memory performance. Project X memory combines blistering fast clock speeds with aggressively tuned latencies.

Project X employs an extreme cooling solution that offers double the surface area and 106% more aluminum mass than standard heat spreaders. With Super Talent’s special thermal adhesive, this cooling solution provides superior heat dissipation that results in a cooler, faster memory device.


The Super Talent Project X W1800UX4GP memory kit will set you back $499.


About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.



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