TSMC unveils 28nm and 32nm proccess details

Posted on Tuesday, Sep 30 2008 @ 03:15 CEST by Thomas De Maesschalck
Taiwanese foundry TSMC unveiled information about its upcoming 32nm and 28nm processes. Unfortunately, the article reveals TSMC won't be able to offer high-k/metal-gate technology on its 32nm node, this offering has been delayed to 28nm.
Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) has rolled out its 28-nm process and revealed a surprise: It has pushed out--or delayed--its initial high-k/metal-gate offering until 28-nm, putting it slightly behind its rivals in Chartered, IBM and Samsung. TSMC was originally supposed to have its high-k/metal-gate offering at the 32-nm node.

Silicon foundry giant TSMC (Hsinchu, Taiwan) also provided details of its yet-to-be-introduced 32-nm process. The 32-nm process is a cost-down version of its 40-nm technology, while 28-nm is considered by TSMC as a ''full-node'' offering. As expected, both the 32- and 28-nm processes make use of 193-nm immersion lithography, copper-interconnects, ultra low-k dielectrics, strained-silicon and other features.

At 28-nm, TSMC plans to offer two separate options for the gate stack: conventional silicon oxynitride (SiON) and a newfangled high-k/metal-gate technology. It will offer two 28-nm versions with high-k and metal gates: a low-power and high-performance technology.

But at 32-nm, the company will only offer a SiON for the gate stack, which appears to be a change in direction for TSMC.
Read more over here.

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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