According to the IEDM paper, Intel built a functional 32-nm, 291-Mbit SRAM array test chip with a 0.171-micron² cell size. The device has nearly 2 billion transistors, and an array density of 4.2-Mbit².More info over here.
The test chip operated at 3.8-GHz at 1.1 Volt, according to the paper. Intel (Santa Clara, Calif.) is expected to deploy its first immersion lithography scanners at 32-nm. The 193-nm machines will be sourced from Nikon Corp. (Tokyo).
The process also makes use of a second-generation, high-k/metal gate technology, a strained channel, and nine levels of low-k interconnect dielectrics, according to a sneak preview of the paper.
Intel to show off its 32nm processor process in December
Posted on Thursday, October 30 2008 @ 0:00 CET by Thomas De Maesschalck