Samsung Electronics plans to begin mass production of its multi-level cell (MLC) 8Gbit NAND flash memory in the fourth quarter of next year, according to Kim Il-ung, vice president of Samsung’s memory product group, during an October 12 conference in Taiwan.
In September, Samsung announced the 8Gbit chip, designed with 60nm process technology. The company said in a press release that the chip will allow designs of up to 16GB of storage on a single memory card. Samsung expects to launch a 16Gbit MLC NAND flash memory chip in 2007, Kim added..
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Samsung to start mass production of 8Gbit NAND flash in Q4 2005
Posted on Thursday, Oct 14 2004 @ 17:12 CEST by Thomas De Maesschalck