Hynix 40nm 1Gb DDR3 enter mass production in Q3 2009

Posted on Tuesday, Feb 10 2009 @ 00:05 CET by Thomas De Maesschalck
Hynix unveiled its 2133Mbps 1Gb DDR3 DRAM chips are going to enter mass production in the third quarter:
The new 1Gb DDR3 DRAM delivers a maximum speed of 2133Mbps (megabit per second) and operates at a wide range of voltage. The mass production of 1Gb DDR3 DRAM using Hynix' 40nm process technology is slated to begin in the third quarter of 2009, the company said.

Hynix' overall productivity of 40nm 1Gb DDR3 DRAM has increased by more than 50% over its existing 50nm process technology, according to the company. By applying technology of 'three-dimensional transistor' architecture, the product minimizes leakage current and further reduces overall power consumption.

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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