By successfully developing a 50nm-class process, Hynix has overcome the challenge of producing mobile DRAMs with both high speed and low power consumption features.
This device is offered at a maximum speed of 1066MHz, and with 32-bit I/O, boasts bandwidth of 4.26GB/s(Giga byte per second) on a single channel device and 8.52GB/s on a dual channel. Hynix’s ‘One Chip Solution’ design, offers the customer flexible options with 2-bit or 4-bit prefetch, and 16 or 32-bit I/O on a single chip. Additionally, Hynix’s new mobile DDR2 is an eco-friendly device since it consumes only 50% of power compared to the previous generation mobile DDR, and 30% compared to standard DDR2 DRAM.
The product complies with the JEDEC standards, and is well suited for next generation mobile applications such as MID (Mobile Internet Device), NetBooks and High-end smartphones requiring high bandwidth and extended battery life.
The product is available in JEDEC standard packages and also in custom packages to meet a wide range of user requirements.
Hynix debuts low power 54nm mobile 1Gb DDR2 chip
Posted on Tuesday, Apr 28 2009 @ 02:35 CEST by Thomas De Maesschalck