While performance-improving cache memory gets a lot of attention, there is an increasing need on today's chips for programmable read-only memory (PROM) as well. This is used to permanently store information for such user-visible features as code storage and on-chip encryption keys, as well as yield-enhancing functions such as cache repair and post-silicon circuit tuning. PROMs rely on electrical fuses for in-factory programming. Salicided polysilicon has traditionally served as a fuse element in several generations of CMOS technologies, but Intel's recent transition to high-k metal-gate technology requires a significant shift in fuse design to metal fuses. Intel has developed a new metal fuse-based 3-D high-density PROM technology that is fully compatible with high-k metal gate. The new technology has been developed for Intel's 32nm process, on which it has a 1.37 square micron cell. It is readily scalable for future logic technologies. Details are being described this week at the 2009 Symposia on VLSI Technology and Circuits in Kyoto, Japan.
Intel researchers working on long-term memory for chips
Posted on Thursday, June 18 2009 @ 9:25 CEST by Thomas De Maesschalck