Posted on Thursday, June 18 2009 @ 20:10 CEST by Thomas De Maesschalck
TSMC announced its 28nm process will be ready by early 2010:
Taiwan Semiconductor Manufacturing Company (TSMC) has announced development of its 28nm low-power technology that extends Silicon Oxynitride (SiON)/poly usage beyond 32nm with a dual/triple gate oxide process. TSMC plans to deliver its 28nm process in early 2010 as a full node, offering the option of power-efficient high performance and lower power technologies.
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In the paper, TSMC said low-standby and low-operating power transistors using SiON provide an up to 25-40% speed improvement, or 30-50% active power reduction over prior 45nm technology.
More info
at DigiTimes.
