Silicon Power’s DDR3-1333 /1066 memory modules are in compliance with JEDEC DDR3 standards. Using the new Fly-by circuit design for efficient communications between DRAM modules and the controller; its On-DIE Termination (ODT) technology dramatically reduces unwanted reflection signals and maximizes speed. Silicon Power insists on using original memory modules and FBGA packaging for better heat dissipation and accurate data transfer. Tested 100% proof for dual channel operation, Silicon Power’s dual channel DDR3 memory pack is stable, durable and highly compatible.
Silicon Power’s DDR3-1333/1066 dual channel memory pack is available in 4GB (2GB x 2) and 2GB (1GB x 2) variants for users to choose from. It is in compliance with RoHS standards, comes with a complete after-sales service and lifetime warranty.
Product features
New generation memory module, effectively reduces power consumption by 20% ~ 30%
Original 128Mx8 FBGA modules for better heat dissipation
Uses Fly-by circuitry design for efficient communications between DRAM modules and the controller
On-DIE Termination (ODT) technology dramatically reduces unwanted reflection signals and maximizes speed
Uses original memory modules, FBGA packaging and ruggedly tested under dual channel operation
Stable, durable and highly compatible
Product specifications
Memory type: DDR3 Memory
Memory pin: 240Pin Long-DIMM
Operating frequency: DDR3-1333MHz / DDR3-1066MHz
Mode of operation: Unbuffered Non-ECC Memory
Capacity: 4GB(2GB*2) / 2GB(1GB*2)
Module: 128Mx8 (bit) (single module)
Operating voltage: 1.5 V
Cas latency:9 (1333MHz) / 7 (1066MHz)
Warranty: Lifetime
Silicon Power debuts new DDR3 modules
Posted on Sunday, July 05 2009 @ 1:55 CEST by Thomas De Maesschalck