The US-based memory maker said producing on 40nm coupled with its 6F2 technology will make 40nm the company's major process technology in 2011, prior to moving to a 4F2 cell design in 2012.
Micron will be able to lower its overall production cost by 50% by moving to 50nm and by another 30% by moving to 40nm, the company said. Its monthly investment per 1,000 wafers can also be reduced from US$12 million for 50nm to US$4 million for 40nm with 6F2, and further to US$2 million for 40nm with 4F2, according to Micron.
Micron expects to enter mass production of DRAM chips using 50nm process technology in 2010, with significantly improved yield rates at its facility in Virginia and a successful ramp at Inotera Memories, said the company.
Micron to enter 40nm volume production by year-end
Posted on Monday, Aug 17 2009 @ 14:54 CEST by Thomas De Maesschalck