“With the new DDR MLC NAND, double data rate transmission can be achieved without increasing power consumption, giving designers a lot more latitude in introducing diverse CE devices,” said Soo-In Cho, executive vice president and general manager of the Memory Division at Samsung Electronics.
DDR NAND will sharply raise the read performance of mobile devices requiring high-speeds and large amounts of storage space. Samsung’s new DDR MLC NAND chip, which reads at 133Mb/s (16.6MB/s) would replace single data rate (SDR) MLC NAND, which has an overall read performance of 40Mb/s (5MB/s).
Samsung’s new asynchronous DDR MLC NAND can be used in SSDs for PCs, premium SD memory cards for smartphones, and in Samsung’s proprietary moviNANDTM memory. In addition, the high-density, high-performance memory is an ideal solution for personal media players (PMPs), MP3 players and car navigation systems (CNS).
Samsung reveals NAND memory with DDR interface
Posted on Wednesday, December 02 2009 @ 17:55 CET by Thomas De Maesschalck