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Samsung reveals NAND memory with DDR interface

Posted on Wednesday, December 02 2009 @ 17:55:28 CET by


X-bit Labs reports Samsung started shipping 30nm 32Gb MLC NAND flash memory chips with an asynchronous DDR interface:
“With the new DDR MLC NAND, double data rate transmission can be achieved without increasing power consumption, giving designers a lot more latitude in introducing diverse CE devices,” said Soo-In Cho, executive vice president and general manager of the Memory Division at Samsung Electronics.

DDR NAND will sharply raise the read performance of mobile devices requiring high-speeds and large amounts of storage space. Samsung’s new DDR MLC NAND chip, which reads at 133Mb/s (16.6MB/s) would replace single data rate (SDR) MLC NAND, which has an overall read performance of 40Mb/s (5MB/s).

Samsung’s new asynchronous DDR MLC NAND can be used in SSDs for PCs, premium SD memory cards for smartphones, and in Samsung’s proprietary moviNANDTM memory. In addition, the high-density, high-performance memory is an ideal solution for personal media players (PMPs), MP3 players and car navigation systems (CNS).




 



 

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