The University of Tokyo developed the "organic flash memory," a non-volatile memory that has the same basic structure as a flash memory and is made with organic materials.
The erasing and reading voltages of the new flash memory are as low as 6V and 1V, respectively. Data can be written in and erased from the memory more than 1,000 times.
With its flexibility, the flash memory can be used for large-area sensors, electronic paper and other large-area electronic devices if its memory retention time can be extended, the university said.
University of Tokyo shows off flexible organic flash memory
Posted on Saturday, December 19 2009 @ 14:37 CET by Thomas De Maesschalck
Researchers at the University of Tokyo have developed flexible organic flash memory, more info can be found at TechOn.