Micron gets ready for sub-25nm NAND technology

Posted on Wednesday, March 03 2010 @ 0:05 CET by Thomas De Maesschalck

DigiTimes writes Micron is gearing up to advance its NAND flash process technology to sub-25nm nodes in 2011.

Micron Technology is set to advance its NAND flash process technology to sub-25nm nodes in 2011, and is gearing up the development of NAND memory supporting ONFI's soon-to-be available specification called EZ-NAND, according to Kevin Kilbuck, director of NAND market development for Micron.

According to Micron's NAND flash process roadmap, the company expects to enter the sub-25nm technology era in 2011 about one year after mass production of 25nm-made products in mid-2010. The memory maker also looks to develop its charge trap flash (CTF) technology, a replacement option for the current mainstream floating-gate NAND technology.

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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