Posted on Thursday, April 22 2010 @ 3:50 CEST by Thomas De Maesschalck
EE Times
writes Numonyx has introduced the Omneo range of NOR-compatible phase-change memories. These chips promise up to 300 times faster write speeds and ten times more write endurance than today's flash memory.
The products are 128-Mbit capacity devices made using a 90-nm process technology that offer up to "300 times faster write speeds and ten times more write endurance than today's flash memory," the company said in a statement.
The P5Q product supports the serial peripheral interface. The P8P product supports the parallel x16 NOR interface and is essentially the 128-Mbit 'Alverstone' phase-change memory that Numonyx has been sampling since 2008. However the write endurance has been increased by a factor of ten to 1 million cycles.
The P8P introduction is described as a "second release"
The advantages of the PCM devices over those NOR flash memories that they can drop-in replace, are stated to be byte alterable programming, no erase required, over-write capability and one million write cycles or 10 times the endurance capability of flash.
