Samsung announced it's ramping up 40nm DDR3 memory production to meet increased demand in server applications:
The recent launch of Intel Corporation’s Intel® Xeon® processor 5600 Series, as well as the introduction of Xeon® 7500 processors support the growing industry demand for enhanced performance and low power platform solutions, especially when paired with DDR3 memory.
Samsung’s DDR3 – the industry best-selling DDR3 – enables OEMs to use up to 192 gigabytes (GBs) on a Xeon 5500 platform (16GBx12) with at least a 73 percent improvement in power consumption at 1.35 volts, when accompanied by the Xeon 5600 processor. DDR3 has double the memory bandwidth of DDR2, with speeds up to 1333 Megabits per second (Mbps). With the new Xeon 7500 platform, OEMs can use up to 1 terabyte per 4-socket system and with more sockets, can easily scale to memory densities 2 TBs and higher. Later this year, Samsung’s 4 Gigabit (Gb) DDR3 chips and modules also will be available for use with the latest Xeon platforms and processors.
“When used in conjunction with use of the Xeon processor 5600 series and the 5500 and 7500 platforms, DDR3 is designed to dramatically improve the efficiency of data transactions while lowering power consumption in virtually any enterprise server application,” said Jim Elliott, vice president, memory marketing, Samsung Semiconductor, Inc. “Our low-power DDR3 solutions will play a pivotal role in advancing the design of new-generation, ‘green’ servers,” he added.
“We have been working closely with Samsung to advance the importance of green memory in the data center,” said Lorie Wigle, General Manager, Intel Eco-Technology Office. “Our new multi-core Xeon lines have been designed to not only accommodate the most energy-efficient memory in the market today, but also to provide IT managers with the best power-to-performance ratio for any server environment.”
Samsung’s DDR3 supports the high-performance, low power requirements of a wide range of server applications such as streaming media content delivery, on-line transaction processing internet data centers, and virtualization in data centers, as well as future cloud computing architectures.
Samsung’s DDR3 devices include 1Gb, 2Gb and 4Gb DRAM chips, as well as 1GB, 2GB, 4GB, 8GB, 16GB and 32GB registered DIMMs (dual in-line memory modules) and 1GB, 2GB, 4GB and 8GB ECC unbuffered DIMMs.
The advanced 40nm-class DDR3 chips are available at speeds of 800 megabit per second (Mbps), 1066Mbps, 1333Mbps and 1600Mbps and can offer up to a 40 percent power savings at 1333Mbps, compared to 60nm-class DDR3 chips.