The resulting field-effect transistor switches at the highest speed reported so far: 300 gigahertz in a device with a channel length (the distance between the source and the drain) of 140 nanometers. That’s roughly twice as fast as the best silicon metal-oxide-semiconductor field-effect transistor of similar proportions and comparable to transistors made of indium phosphide or gallium arsenide, which are expensive compound semiconductors.
”It has the potential to get into the terahertz range,” says Xiangfeng Duan of the California NanoSystems Institute at UCLA, who reported the design online in Nature this week. ”Eventually this should be a relatively easy process, and with some modifications it could be a scalable process.”
UCLA scientists craft 300GHz graphene transistor
Posted on Friday, September 03 2010 @ 3:11 CEST by Thomas De MaesschalckIEEE Spectrum reports scientists from the University of California, Los Angeles, have created the first 300GHz graphene transistor. The chip is made on a 140nm process, and according to the researchers the process has the potential to get into the terahertz range.
