EE Times reports that the SOI Industry Consortium has announced that the FD-SOI technology is viable for 20nm chips for mobile and consumer devices and perhaps beyond:
Jockeying for position in the next-generation transistor race, the SOI Industry Consortium claims to have made more progress in bringing fully-depleted silicon-on-insulator (FD-SOI) technology for next-generation mobile products.
The consortium members-ARM, Globalfoundries, IBM, STMicroelectronics, Soitec, and CEA-Leti—have announced results of an assessment and characterization of FD-SOI, saying that the technology is viable for mobile and consumer devices at the 20-nm node and perhaps beyond. The group has demonstrated the benefits of planar FD-SOI technology for these applications based on an ARM processor.
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Re: SOI group says technology is viable for 20nm mobile and consumer devices by Anonymous on Monday, February 14 2011 @ 00:07:16 CET
I saw that......
this could actually be really good news, it seems that the cost challenges of SOI substrate have been overcome by a simpler processing. Physics is on FD-SOI side.
Now the is a question is who do you believe in the mobile space, intel or ARM.. ?