Jockeying for position in the next-generation transistor race, the SOI Industry Consortium claims to have made more progress in bringing fully-depleted silicon-on-insulator (FD-SOI) technology for next-generation mobile products.
The consortium members-ARM, Globalfoundries, IBM, STMicroelectronics, Soitec, and CEA-Letiāhave announced results of an assessment and characterization of FD-SOI, saying that the technology is viable for mobile and consumer devices at the 20-nm node and perhaps beyond. The group has demonstrated the benefits of planar FD-SOI technology for these applications based on an ARM processor.
SOI group says technology is viable for 20nm mobile and consumer devices
Posted on Sunday, February 13 2011 @ 1:00 CET by Thomas De Maesschalck
EE Times reports that the SOI Industry Consortium has announced that the FD-SOI technology is viable for 20nm chips for mobile and consumer devices and perhaps beyond: