The latest tech has been specifically developed for mobile devices and offers a 60% active power reduction at the same frequency - or a 55% performance boost at the same leakage over 45nm low power (LP) SoC designs.
GloFo & Samsung synchronize 28nm High-K Metal Gate chipsThe above-mentioned agreement between GlobalFoundries and Samsung expands a previous deal clinched in 2010, when the two companies confirmed a fab synchronization based on low-power 28nm HKMG technology in collaboration with IBM and STMicroelectronics.
According to a GloFo rep, high-performance synchronization essentially complements the low-power technology - extending the frequency of operation for high-performance smartphones, tablets, and notebook computers, while retaining ultra-low leakage transistors and memories to enable the long battery life required for mobile platforms.
GlobalFoundries and Samsung synchronize 28nm HKMG production
Posted on Tuesday, August 30 2011 @ 22:23 CEST by Thomas De Maesschalck