Posted on Friday, December 07 2012 @ 12:04 CET by Thomas De Maesschalck
EE Times
reports Intel will detail its latest tri-gate advanceds
at the 2012 International Electronics Devices Meeting (IEDM) in San Francisco from December 10-12, 2012. Also in the spotlight at the meeting will be IBM's 22nm SOI process, as well as germanium integrated directly on silicon in FinFETs (TSMC).
The 58th annual IEDM includes a strong overall emphasis on circuit-device interaction, energy harvesting and power devices, and biomedical devices, spiced with intriguing keynotes from Samsung (state of the art in displays), IMEC (ultimate device technologies) and the University of Illinois (bio-integrated electronics). Luncheon speakers include GlobalFoundries CEO Ajit Manocha ("Is the fabless model dead?") and Marvell co-founder Weili Dai.
In addition, descriptions of tri-gate advances from Intel and 22-nm silicon-on-insulator technology from IBM, as well as germanium integrated directly on silicon in FinFETs (TSMC) are on the agenda.
