WHILE WE WAIT for traditional flash technology to reach the end of the miniaturisation curve, Sandisk and Toshiba have manufactured a test chip that uses ReRAM or resistive Random Access Memory technology, which is also referred to as the memristor.
The chip has been manufactured on a 24nm fab process and has a capacity of 32GB.
ReRAM has several advantages over flash insofar as the memory cells are individually addressable like traditional dynamic RAM. In addition it is also non-volatile, which means that it does not lose data when power is turned off.
More details about the chip are expected to be announced at the International Solid-State Circuits Conference (ISSCC) on February 17-21, 2013.