GlobalFoundries revealed at the Common Platform Technology Form (CPTF) that preliminary results of a dual-core ARM Cortex-A9 made on its future 14nm-XM process indicate the new node enables two times higher energy efficiency compared to its 28nm-SLP process. Full details at X-bit Labs.
“These preliminary results illustrate the potential benefits of FinFET technology applied to an ARM processor-based system-on-chip (SoC). Early collaboration on manufacturing process technologies allows GlobalFoundries and ARM to identify and address SoC design challenges and reduce risks to adoption by our mutual customers,” said Dipesh Patel, executive vice president and general manager of physical IP Division at ARM.
GlobalFoundries used technical specifications from its 14nm-XM process design kit (PDK) combined with ARM Artisan standard-cell libraries and memories to release a graphic database system (GDS) file that has been used to calculate expected performance, power and area metrics. The results were compared to a silicon implementation of a dual-core ARM Cortex-A9 processor manufactured on GlobalFoundries’ 28nm-SLP technology.