“These preliminary results illustrate the potential benefits of FinFET technology applied to an ARM processor-based system-on-chip (SoC). Early collaboration on manufacturing process technologies allows GlobalFoundries and ARM to identify and address SoC design challenges and reduce risks to adoption by our mutual customers,” said Dipesh Patel, executive vice president and general manager of physical IP Division at ARM.
GlobalFoundries used technical specifications from its 14nm-XM process design kit (PDK) combined with ARM Artisan standard-cell libraries and memories to release a graphic database system (GDS) file that has been used to calculate expected performance, power and area metrics. The results were compared to a silicon implementation of a dual-core ARM Cortex-A9 processor manufactured on GlobalFoundries’ 28nm-SLP technology.
GlobalFoundries: 14nm-XM twice as energy efficient than 28nm
Posted on Wednesday, February 06 2013 @ 12:33 CET by Thomas De Maesschalck