DV Hardware - bringing you the hottest news about processors, graphics cards, Intel, AMD, NVIDIA, hardware and technology!

   Home | News submit | News Archives | Reviews | Articles | Howto's | Advertise
 
DarkVision Hardware - Daily tech news
December 16, 2017 
Main Menu
Home
Info
News archives
Articles
Howto
Reviews
 

Who's Online
There are currently 80 people online.

 

Latest Reviews
Arctic BioniX F120 and F140 fans
Jaybird Freedom 2 wireless sport headphones
Ewin Racing Champion gaming chair
Zowie P-TF Rough mousepad
Zowie FK mouse
BitFenix Ronin case
Ozone Rage ST headset
Lamptron FC-10 SE fan controller
 

Follow us
RSS
 

IMFT: 2D flash to scale down to 10nm

Posted on Wednesday, May 29 2013 @ 20:00:13 CEST by


IM Flash Technologies, the flash joint venture of Intel and Micron, anticipates traditional NAND flash memory will scale down to 10nm. CEO Keyvan Esfarjani said that 15nm and 10nm is possible with current NAND structures, and that 3D NAND structures should carry the technology beyond 10nm.
Intel already has a 22-nm chip fabrication process that uses a "3D" gate structure, but that's not what Esfarjani is talking about. 3D NAND refers to flash memory that stacks multiple cell layers on top of each other. EE Times notes that Toshiba has been hyping 3D NAND tech for years, and that it's due to start sampling a 16-layer device this year. Esfarjani told the conference that 32-64 layers are needed to make 3D flash cost-effective.

3D NAND is probably a few years away, so what's IMFT working on for the 2D stuff? Nitride film and nanodots, according to Esfarjani. It's unclear whether either will be necessary to shrink cells for 15-nm production, but the challenge appears to be making the cells last with that smaller geometry. As NAND cells shrink, their write/erase endurance tends to degrade.




 



 

DV Hardware - Privacy statement
All logos and trademarks are property of their respective owner.
The comments are property of their posters, all the rest © 2002-2017 DM Media Group bvba