The Fab 2 building, which ended its 200 mm wafer production in 2010, is currently used as an office building, and after its demolition (due to start this month), construction of a new fab should begin in September 2014, with a target completion date of summer 2015.Source: EE Times
Toshiba expects to begin mass production of 3D memory in the second Half of FY2015, relying on existing equipment from nearby Fab 3 and Fab 4. The company will then transition to Fab 2 to convert more 2D NAND capacity to 3D NAND as the clean room investments are finalized.
Toshiba and SanDisk to replace 2D NAND fab with 300mm 3D
Posted on Friday, May 23 2014 @ 11:08 CEST by Thomas De Maesschalck