Toshiba and SanDisk to replace 2D NAND fab with 300mm 3D

Posted on Friday, May 23 2014 @ 11:08 CEST by Thomas De Maesschalck
Toshiba logo
Toshiba announced it will raze its Fab 2 NAND memory production fab at Yokkaichi Operations, a NAND Flash memory plant in Mie prefecture, Japan to the ground to replace it with a more modern facility. Fab 2 started production in 2010, the fab produces 2D NAND flash memory at 200mm wafers. The new fab will be a joint-venture with SanDisk, it's projected to start churning out 3D NAND flash memory on 300mm wafers in 2016.
The Fab 2 building, which ended its 200 mm wafer production in 2010, is currently used as an office building, and after its demolition (due to start this month), construction of a new fab should begin in September 2014, with a target completion date of summer 2015.

Toshiba expects to begin mass production of 3D memory in the second Half of FY2015, relying on existing equipment from nearby Fab 3 and Fab 4. The company will then transition to Fab 2 to convert more 2D NAND capacity to 3D NAND as the clean room investments are finalized.
Source: EE Times

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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