Intel ventured into gate-last HKMG transistors in 2007 with their 45nm node processors, followed by TSMC in 2012 and Samsung in 2014. We at TechInsights note that both Samsung and GlobalFoundries began their metal gate transistors with a gate-first process at their 32/28nm nodes and then later switched to the gate last process for their 20nm process nodes.Full details at EE Times.
The two variants of the HKMG transistors are gate-first and gate-last, with the gate-last having an additional two versions: high-k first or high-k last. Intel’s 45nm HKMG process featured a high-k first gate-last fabrication sequence, while their 32nm process was a high-k last gate-last process.
UMC masters HKMG transistor production on its 28nm process
Posted on Thursday, Aug 20 2015 @ 12:23 CEST by Thomas De Maesschalck