SK Hynix to make 48-layer NAND in 2016

Posted on Friday, Oct 16 2015 @ 12:06 CEST by Thomas De Maesschalck
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Memory maker SK Hynix recently kicked off mass production of 20nm-class DRAM chips and said it plans to start volume production of 36-layer 3D NAND flash memory chips towards the end of this year, before starting production of 48-layer products sometime in 2016.

The firm is catching up with Samsung, which started 20nm-class DRAM production in March 2014, and revealed its first mass production 48-layer NAND chip in August 2015.
SK Hynix also announced the development plan for 3D NAND flash products. President Park Sung-wook said, “It is a process to verify a new technology. We are planning to produce a little few 36-layer 3D NAND flash chips by stages this year, and mass produce 48-layer products next year in earnest.”

He said that we should watch next-generation DRAM more. Park said, “New memory will be good, but we are focusing more on extending the merits of existing DRAM and NAND products. Rather than releasing a new memory chip in the market, we are trying to find the way to bring out the good in existing memory chips.”
Soruce: Business Korea


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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.



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