Chinese foundries adopting FD-SOI to compete with FinFET

Posted on Friday, Oct 30 2015 @ 13:33 CET by Thomas De Maesschalck
DigiTimes reports the Chinese chip wafer foundry firms in China are focusing on Fully Depleted Silicon-on-Insulator (FD-SOI) as a competitor to the FinFET technology adopted by TSMC and Intel. The site says this process technology will primarily be used for smaller chip orders for low to medium-priced chips, the other end of the spectrum (high-priced, high-performance, high-volume) will more likely be produced at FinFET fabs.
FD-SOI is characterized by lower forward voltage and operating voltage requirements and also more power saving. Meanwhile, the operating cost of FD-SOI per circuit is lower than that of FinFET.

However, the FD-SOI process has not been scaling down as well as FinFET, and the transistor density of FD-SOI is also lower than that of FinFET, Digitimes Research noted.

Current advocates for the FD-SOI process include Globalfoundries, Samsung Semiconductor and STMicroelectronics. China-based HH Grace Semiconductor is also expected to join the FD-SOI camp.

About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

Loading Comments