TSMC indicated its 10nm FinFET process is on track, the Taiwanese foundry said it has broken ground for a 10nm Fab in June and is on schedule to ramp up trial production in the second half of 2016. It's not exactly new information but rather confirmation that everything is going as planned.
If production begins in 2H 2016 as planned then the first products should hit the shelves by 2017. TSMC’s 10nm FinFET (CLN10FF) will have 110 – 120 per cent higher transistor density compared to its 16nm FinFET+ (CLN16FF+) process tech, 15 per cent higher frequency potential at the same power and 35 per cent lower power consumption at the same frequency and complexity. Something worth noting is the fact that the characteristics of the node have not been finalized although one can make a pretty good guess as to its physical traits.