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GlobalFoundries working on next-gen FD-SOI process

Posted on Thursday, May 26 2016 @ 14:40:21 CEST by

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GlobalFoundries chief technology officer Gary Patton revealed the foundry is on track to debut its 22FDX fully-depleted silicon-on-insulator process technology later this year. This new process technology promises to deliver FinFET-like performance and energy efficiency at a cost level comparable with planar 28nm CMOS. The process is mainly geared for mobile and IoT chips and GlobalFoundries is already working on a follow-on process, but Patton didn't reveal a nominal node name.
Globalfoundries is working with a company called Invecas Inc. to develop foundation IP for its 14nm FinFET and 22nm FDSOI manufacturing processes. The schedule for 22FDX has Globalfoundries starting risk production for customers late in 2016 with volume manufacturing arriving in 2017.

Patton made the point that FinFET processes with their high drive current capability are well suited to driving signal lines across large chips and where sustained performance is required. However, for smaller chips and chips where power consumption is key then FDSOI is a better option. Patton also makes the point that FinFETs have a quantized drive regime where a developer must choose between 1, 2 or more fins, which is not suited to analog or RF signal.
Full details at EE Times.



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