Posted on Thursday, August 11 2016 @ 12:52 CEST by Thomas De Maesschalck
Samsung announced its fourth-generation V-NAND technology at the Flash Memory Summit. This TLC NAND flash memory will be stacked 64 layers high, resulting in a capacity of up to 512Gb (64GB) per chip. The South Korean conglomerate says each die has a bandwidth of up to 100MB/s. The first products with 4th gen V-NAND are expected in Q4 2016.
Samsung introduced its 4th generation, 64-layer triple-level-cell V-NAND flash memory that pushes the envelope of NAND scaling, performance and storage capacity. Stacking 64 layers of cell-arrays, the new V-NAND can increase its single-die density to an industry-leading 512Gb and its IO speed to 800Mbps, which further distinguishes Samsung’s technology leadership in three-dimensional NAND cell structure design and production. Starting in August 2013, Samsung has previously introduced three generations of “industry-first” V-NAND products with 24, 32 and 48-layer vertical cell-array stacking technologies.
Samsung plans to provide the world’s first 4th generation V-NAND flash memory products in the fourth quarter of this year, which will help manufacturers to produce faster, more stylish and portable computing devices, while offering consumers a more responsive computing environment.
Next year, Samsung will be using this memory to launch a 32TB SAS SSD for the enterprise market, this disk will use the 2.5" form factor. Further improvement in V-NAND technology should make it possible to launch SSDs with a capacity in excess of 100TB by 2020.
