Samsung stacking its 4th generation 3D NAND 64-layers high, promises 100TB SSD by 2020

Posted on Thursday, Aug 11 2016 @ 12:52 CEST by Thomas De Maesschalck
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Samsung announced its fourth-generation V-NAND technology at the Flash Memory Summit. This TLC NAND flash memory will be stacked 64 layers high, resulting in a capacity of up to 512Gb (64GB) per chip. The South Korean conglomerate says each die has a bandwidth of up to 100MB/s. The first products with 4th gen V-NAND are expected in Q4 2016.
Samsung introduced its 4th generation, 64-layer triple-level-cell V-NAND flash memory that pushes the envelope of NAND scaling, performance and storage capacity. Stacking 64 layers of cell-arrays, the new V-NAND can increase its single-die density to an industry-leading 512Gb and its IO speed to 800Mbps, which further distinguishes Samsung’s technology leadership in three-dimensional NAND cell structure design and production. Starting in August 2013, Samsung has previously introduced three generations of “industry-first” V-NAND products with 24, 32 and 48-layer vertical cell-array stacking technologies.

Samsung plans to provide the world’s first 4th generation V-NAND flash memory products in the fourth quarter of this year, which will help manufacturers to produce faster, more stylish and portable computing devices, while offering consumers a more responsive computing environment.
Next year, Samsung will be using this memory to launch a 32TB SAS SSD for the enterprise market, this disk will use the 2.5" form factor. Further improvement in V-NAND technology should make it possible to launch SSDs with a capacity in excess of 100TB by 2020.

About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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