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October 22, 2017 
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China to make its own 3D NAND flash memory

Posted on Wednesday, January 18 2017 @ 15:13:44 CET by


Yangtze River Storage Technology confirmed it's going to develop its own 3D NAND flash memory. The state-backed company has not disclosed a date for volume production but DigiTimes heard rumors that China's first homegrown 3D NAND flash memory may roll out of the fab at the end of 2017.
Simon Yang, CEO for both Yangtze River Storage and Wuhan Xinxin Semiconductor Manufacturing (XMC), disclosed Yangtze River Storage is engaged in the development of 32-layer 3D NAND flash chips and expects to narrow its technological gap with international memory vendors in 2019.

Yangtze River Storage is looking to transition to the world's leading memory firms, in terms of technology, by 2020, according to Yang.
As reported earlier this month, China is investing a lot of money in chip production. The state-owned Tsinghua Unigroup has said it will invest a total of $70 billion the coming years, which includes $24 billion for Yangtze River Storage Technology's memory plant in Wuhan.



 



 

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