Posted on Thursday, February 09 2017 @ 13:20 CET by Thomas De Maesschalck
Toshiba announced it kicked off construction of a new semiconductor fab (Fab 6) and a new Memory R&D Center at Yokkaichi Operations in Mie prefecture, Japan. The R&D center is expected to be ready by the end of this year, while Phase 1 of Fab 6 is scheduled for completion for summer 2018. The new factory will be dedicated to the production of BiCS FLASH, Toshiba's spin on 3D NAND flash memory.
Toshiba Corporation (TOKYO:6502) today announced that it has started construction of a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D center, the Memory R&D Center, at Yokkaichi Operations in Mie prefecture, Japan, the company’s main memory production base.
Fab 6 will be dedicated to production of BiCS FLASH™, Toshiba’s innovative 3D Flash memory. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.
Toshiba will also construct a Memory R&D Center adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH™ and new memories.
Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH™ production in line with market trends, and to retain leadership in innovation in the memory business.
