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October 23, 2017 
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Toshiba doubles 64-layer 3D TLC NAND chip capacity to 64GB

Posted on Wednesday, February 22 2017 @ 14:17:08 CET by


Toshiba logo
The future of Toshiba's semiconductor unit remains uncertain but the company keeps innovating as they just started shipping samples of their first 64-layer 3D TLC Flash Memory with a capacity of 512Gb (64GB) per chip. The new chip offers double the capacity of what's currently in mass production and is expected to ship in volume in the second half of this year.

The Japanese firm also mentions it's readying world's first 1TB product that features a 16-die stacked architecture in a single package. Sample shipments of this product are expected in April 2017.
Toshiba Corporation (TOKYO: 6502) has today unveiled the latest addition in its industry-leading line-up of BiCS FLASH three-dimensional flash memory with a stacked cell structure*1, a 64-layer device that achieves a 512-gigabit (64-gigabytes) capacity with 3-bit-per-cell (triple-level cell, TLC) technology. The new device will be used in applications that include enterprise and consumer SSD. Sample shipments of the chip started this month, and mass production is scheduled for the second half of this calendar year.

Toshiba continues to refine BiCS FLASH, and the next milestone on its development roadmap is the industry’s largest capacity, a 1-terabyte product with a 16-die stacked architecture in a single package. Plans call for the start of sample shipments in April 2017.

For the new 512-gigabit device, Toshiba deployed leading-edge 64-layer stacking process to realize a 65% larger capacity per unit chip size than the 48-layer 256-gigabit (32-gigabytes) device, and has increased memory capacity per silicon wafer, reducing the cost per bit.

Toshiba’s Memory business already mass produces 64-layer 256-gigabit (32-gigabytes) devices and will expand BiCS FLASH production. It will advance 3D technology to realize increased densities and finer processes in order to meet diversifying market needs.




 



 

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