GlobalFoundries to use EUV for certain levels at the 7nm node

At last week's IEEE International Electron Device Meeting (IEDM) in San Francisco, GlobalFoundries shared details about how it will adopt extreme ultraviolet (EUV) lithography at the 7nm node.

EE Times writes GlobalFoundries will primarily use traditional immersion lithography at the 7nm node, but the company designed its technology to ensure it can insert EUV for specific levels to improve cycle time and manufacturing efficiency. The foundry is currently installing EUV equipment at its Fab 8 in NY:

Globalfoundries, which has said previously that it would insert EUV at the 7-nm node, detailed a platform that is entirely based on immersion optical lithography but is designed to enable the insertion of EUV for specific levels to improve cycle time and manufacturing efficiency. Gary Patton, Globalfoundries chief technology officer and senior vice president of global R&D, said in an interview with EE Times that kinks in EUV still need to be worked out — chiefly pellicle and inspection technologies — but that Globalfoundries is currently installing its first EUV production tools at its Fab 8 in upstate New York.

The first 7nm chips from GlobalFoundries are expected next year.