Dutch semiconductor equipment leader ASML announced its NXE 3400B system for extreme ultraviolet (EUV) lithography is now capable of producing 140 wafers per hour with a 245W light source. This means the company is closing in on its goal of tuning the system for throughput of 150 wafers per hour with a 250W light source. These systems are expected to ship to customers before June for use on 7nm nodes.
The company targets a greater-than-90% uptime for the system by 2018–2019, when it should be in volume production. A day earlier, a Globalfoundries executive said that productivity levels were the key gating item on the first commercial use of the systems.
To meet the needs of 5-nm nodes, ASML plans three upgrades to the system delivered over the next two years.
Late this year, ASML aims to deliver a so-called overall and focus improvement package that enables overlays down to 1.7 nm, slightly below the required 1.9-nm target for 5 nm. In mid-2019, it plans a productivity enhancement package that boosts throughput to 145 WPH.
More details at EE Times, they have a complete picture about ASML's latest EUV plans.