Posted on Wednesday, March 28 2018 @ 22:15 CEST by Thomas De Maesschalck
Over the next three years, Samsung Electronics
will invest $7 billion to double its NAND memory production capacity in China. The South Korean firm will add a second line to its Xi'an facility in inland Shaanxi Province, this will boost the fab's monthly capacity to 220,000 300mm wafers by 2020. The new line will focus on 3D flash memory.
At a groundbreaking ceremony Wednesday at the plant, Kim Ki-nam, president and CEO of Samsung Electronics' device solutions division, said the company will deliver top-notch semiconductor products to customers.
The new investment is seen as an effort to show Samsung's commitment to China as well as nip any anti-Samsung sentiment there in the bud amid rising protectionism worldwide. The Xi'an fab opened in 2014.
