Samsung aims to make 3nm gate-all-around FETs in 2021

Posted on Wednesday, May 23 2018 @ 14:05 CEST by Thomas De Maesschalck
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Samsung gave an update about its process technology roadmap and indicated it aims to start mass producing gate-al-around (GAA) field-effect transistors (FET) in 2021. This is the successor to FinFET technology, the first node to use GAAFETs will be 3nm.
GAA technology has been under development since the early 2000s by Samsung and other firms. GAA transistors are field-effect transistors (FET) that feature a gate on all four sides of the channel to overcome the physical scaling and performance limitations of FinFETs, including supply voltage.

Samsung's proprietary GAA technology, known as multi-bridge-channel FET (MBCFET), has been in development since 2002, according to Ryan Sanghyun Lee, vice president of market for Samsung Foundry. MCBFET uses a nano-sheet device to enhance gate control, significantly improving the performance of the transistor, according to the company.
The South Korean giant also confirmed it plans to start 7nm LPP EUV production in the second half of this year. Other nodes on the roadmap include 5nm FinFET production in 2019 and 4nm FinFET in 2020.

More details can be read at EE Times. The site says analysts were impressed by Samsung's annual foundry technology forum as they didn't expect GAA transistors until some time in 2022.

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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