Over at the Flash Memory Summit, Toshiba presented some information about XL-Flash, a new type of 3D NAND flash memory that promises lower latency. The first XL-Flash will be made using the same process as Toshiba's 96-layer BiCS4 3D NAND, but it will have better random read IOPS, especially at low queue depths.
Initial versions of XL-Flash will be of the SLC variety, but Toshiba is also working on MLC versions. Not a lot of performance details were shared, other than the statement that XL-Flash offers 1/10th the read latency of TLC NAND.
Made with the same basic process as their 96-layer BiCS4 3D NAND, XL-Flash uses shorter bit lines and word lines to build a flash memory die with many more planes than the two or four usually seen on current NAND devices.
AnandTech reports XL-Flash sounds a bit similar to Samsung's Z-NAND technology. XL-Flash is aimed at the enterprise and datacenter storage markets. There were no details about the capacity, pricing, or availability.