Toshiba teases low-latency XL-Flash

Posted on Wednesday, August 08 2018 @ 11:40 CEST by Thomas De Maesschalck

Over at the Flash Memory Summit, Toshiba presented some information about XL-Flash, a new type of 3D NAND flash memory that promises lower latency. The first XL-Flash will be made using the same process as Toshiba's 96-layer BiCS4 3D NAND, but it will have better random read IOPS, especially at low queue depths.

Initial versions of XL-Flash will be of the SLC variety, but Toshiba is also working on MLC versions. Not a lot of performance details were shared, other than the statement that XL-Flash offers 1/10th the read latency of TLC NAND.

Made with the same basic process as their 96-layer BiCS4 3D NAND, XL-Flash uses shorter bit lines and word lines to build a flash memory die with many more planes than the two or four usually seen on current NAND devices.

AnandTech reports XL-Flash sounds a bit similar to Samsung's Z-NAND technology. XL-Flash is aimed at the enterprise and datacenter storage markets. There were no details about the capacity, pricing, or availability.

Toshiba XL Flash

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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