Samsung lays out QLC NAND memory roadmap

Samsung presented details about its upcoming NAND flash memory products at its Tech Day event in San Jose. One of the interesting things is that Samsung seems to be working on two new consumer disks with QLC NAND flash memory; the 860 QVO SATA and 980 QVO NVMe.

The South Korean giant also revealed a new 512Gb QLC flash memory chip die will be added to the lineup in Q2 2019. This chip promises higher performance than the current 1Tb die:

Samsung also mentioned that in Q2 2019 they are planning to introduce a higher-performing 512Gb QLC die to complement their current 1Tb die. Samsung compared the performance of this new 512Gb die against an unspecified competitor's 1Tb QLC, claiming that Samsung's high-performance QLC will have 37% lower read latency and 45% lower program latency. Their slides suggested that the performance differences relative to Samsung's own 1Tb part could be even larger, but Samsung did not quantify this.

AnandTech has the full overview over here.