EE Times reports both Intel and Samsung revealed embedded MRAM technologies at last week's 64th International Electron Devices Meeting (IEDM) in San Francisco. Interestingly, Intel described its STT-MRAM as production ready and multiple sources told the site that Intel is already using it in commercial products:
Intel (Santa Clara, California) described the key features of spin-transfer torque (STT)-MRAM–based non-volatile memory into its 22FFL process, calling it “the first FinFET-based MRAM technology.” Describing the technology as “production-ready,” Intel did not name any foundry customers for the process, but multiple sources said that it is already being used in products now shipping.
Samsung (Seoul), meanwhile, described STT — MRAM in a 28-nm FDSOI platform. STT-MRAM is regarded as the best MRAM technology in terms of scalability, shape dependence, and magnetic scalability.
MRAM is sort of a replacement for both DRAM and NAND flash memory, and it's also an alternative for embedded SRAM thanks to better read/write times, high endurance, and strong data retention. MRAM is more scalable than SRAM, which isn't shrinking with the rest of the process with smaller process technology.