Posted on Thursday, February 21 2019 @ 14:19 CET by Thomas De Maesschalck
Over at the International Solid-State Circuits Conference in San Francisco, Intel revealed new details about its next-generation embedding spin-transfer torque (STT)-MRAM. To be made on the 22nm FinFET process, this new MRAM is now ready for mass production. The chips are seen as promising for IoT applications.
In a paper presented at the International Solid-State Circuits Conference here Tuesday, Intel said that it has used a “write-verify-write” scheme and a two-stage current sensing technique to create 7-Mb perpendicular STT-MRAM arrays in its 22FFL FinFET process. The company had provided early details of its success in developing the first FinFET-based MRAM devices last year at the International Electron Devices Meeting.
More details
at EE Times.
